Thin-film organic transistors based on a polyelectrolyte chitosan complex with the addition of carbon-containing fillers
Authors
Salikhov Renat Bayazitovich
Ufa University of Science and Technology
Ostaltsova Anastasia Dmitrievna
Ufa University of Science and Technology
Salikhov Timur Renatovich
Ufa University of Science and Technology
Mullagaliev Ilnur Nailevich
Ufa University of Science and Technology
Keywords:
thin films, polyelectrolyte complex of chitosan and chitosan succinamide, graphene oxide, Carboblack C, Carbopack, SWCNT, field-effect transistor, charge carrier mobility
Abstract
The morphology and mobility of charge carriers in composite films no more than 500 nm thick, created on the basis of a polyelectrolyte complex of chitosan and chitosan succinamide with the addition of carbon materials, were studied using atomic force microscopy and scanning electron microscopy. Single-walled carbon nanotubes, graphene oxide and carbon-containing sorbents with different specific surfaces were used as fillers. The obtained films were used as a transport layer in the structure of field-effect transistors. The output and transfer characteristics of the transistors were measured, and based on these data it was found that the mobility of charge carriers (µ) varies from 0.341 to 1.123 cm² V−¹ s⁻ ¹ depending on the type of added carbon material
Author Biographies
Salikhov Renat Bayazitovich, Ufa University of Science and Technology
Doctor of Physical and Mathematical Sciences, Professor, Head of the Department of Electronics and Physics of Nanostructures. ORCID: 0000-0003-0603-4183, 11738898100
Ostaltsova Anastasia Dmitrievna, Ufa University of Science and Technology
Assistant Professor, Department of Electronics and Physics of Nanostructures
Salikhov Timur Renatovich, Ufa University of Science and Technology
Docent, PhD in Physics and Mathematics, Associate Professor, of the Department of Electronics and Physics of Nanostructures. ORCID: 0009-0000-2884-0042. Scopus ID: 55921773000
Mullagaliev Ilnur Nailevich, Ufa University of Science and Technology